The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Jun. 08, 2010
Shu Sasaki, Iwate-ken, JP;
Shu Sasaki, Iwate-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A solid-state imaging device producing method includes the steps of: applying a resist material onto a substrate in which a channel region is formed; forming a resist layer by exposure and development of the resist material using a mask, the resist layer having an opening and a thin-film portion, the mask having a first region through which light is transmitted and a second region through which a smaller quantity of light than that the light transmitted through the first region is transmitted; subjecting the substrate to ion implantation using the resist layer as a mask to form an impurity region; etching the substrate using the resist layer as a mask after the ion implantation to form an alignment mark; and forming an electrode on the impurity region and part of the channel region using the alignment mark as a reference.