The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
May. 21, 2004
Christopher Olsen, Fremont, CA (US);
Pravin K. Narwankar, Sunnyvale, CA (US);
Shreyas S. Kher, Campbell, CA (US);
Randhir Thakur, San Jose, CA (US);
Shankar Muthukrishnan, San Jose, CA (US);
Philip A. Kraus, San Jose, CA (US);
Christopher Olsen, Fremont, CA (US);
Pravin K. Narwankar, Sunnyvale, CA (US);
Shreyas S. Kher, Campbell, CA (US);
Randhir Thakur, San Jose, CA (US);
Shankar Muthukrishnan, San Jose, CA (US);
Philip A. Kraus, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
In one embodiment, a method for forming a dielectric stack on a substrate is provided which includes depositing a first layer of a dielectric material on a substrate surface, exposing the first layer to a nitridation process, depositing a second layer of the dielectric material on the first layer, exposing the second layer to the nitridation process, and exposing the substrate to an anneal process. In another embodiment, a method for forming a dielectric material on a substrate is provided which includes depositing a metal oxide layer substantially free of silicon on a substrate surface, exposing the metal oxide layer to a nitridation process, and exposing the substrate to an anneal process.