The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Dec. 19, 2008
Keisuke Tanizaki, Itami, JP;
Naho Mizuhara, Itami, JP;
Michimasa Miyanaga, Osaka, JP;
Hideaki Nakahata, Itami, JP;
Yoshiyuki Yamamoto, Itami, JP;
Keisuke Tanizaki, Itami, JP;
Naho Mizuhara, Itami, JP;
Michimasa Miyanaga, Osaka, JP;
Hideaki Nakahata, Itami, JP;
Yoshiyuki Yamamoto, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
Methods of growing and manufacturing aluminum nitride crystal, and aluminum nitride crystal produced by the methods. Preventing sublimation of the starting substrate allows aluminum nitride crystal of excellent crystallinity to be grown at improved growth rates. The aluminum nitride crystal growth method includes the following steps. Initially, a laminar baseplate is prepared, furnished with a starting substrate having a major surface and a back side, a first layer formed on the back side, and a second layer formed on the first layer. Aluminum nitride crystal is then grown onto the major surface of the starting substrate by vapor deposition. The first layer is made of a substance that at the temperatures at which the aluminum nitride crystal is grown is less liable to sublimate than the starting substrate. The second layer is made of a substance whose thermal conductivity is higher than that of the first layer.