The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2012
Filed:
Oct. 07, 2010
Guy Cohen, Mohegan Lake, NY (US);
Mark C. Reuter, Montrose, NY (US);
Brent A. Wacaser, Garrison, NY (US);
Maha M. Khayyat, Chappaqua, NY (US);
Guy Cohen, Mohegan Lake, NY (US);
Mark C. Reuter, Montrose, NY (US);
Brent A. Wacaser, Garrison, NY (US);
Maha M. Khayyat, Chappaqua, NY (US);
International Business Machines Corporation, Armonk, NY (US);
King Abdulazlz City for Science and Technology, Rlyadh, SA;
Abstract
A method of fabricating high resolution atomic force microscopy (AFM) tips including a single semiconductor nanowire grown at an apex of a semiconductor pyramid of each AFM tip is provided. The semiconductor nanowire that is grown has a controllable diameter and a high aspect ratio, without significant tapering from the tip of the semiconductor nanowire to its base. The method includes providing an AFM probe including a semiconductor cantilever having a semiconductor pyramid extending upward from a surface of said semiconductor cantilever. The semiconductor pyramid has an apex. A patterned oxide layer is formed on the AFM probe. The patterned oxide layer has an opening that exposes the apex of the semiconductor pyramid. A single semiconductor nanowire is grown on the exposed apex of the semiconductor pyramid utilizing a non-oxidized Al seed material as a catalyst for nanowire growth.