The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2012
Filed:
Mar. 12, 2009
Applicants:
Emad Zawaideh, Carlsbad, CA (US);
Javier Ruiz, Oceanside, CA (US);
Inventors:
Emad Zawaideh, Carlsbad, CA (US);
Javier Ruiz, Oceanside, CA (US);
Assignee:
Other;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01J 4/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Metrology systems and methods that measure thin film thickness and or index of refraction of semiconductor wafers with at least one deposited or grown thin film layer. The present invention measures near normal incidence and grazing angle of incidence reflection (using reflected broadband UV, visible, and near infrared electromagnetic radiation) from a small region on a sample. Embodiments of the system selectively comprise a near-normal incidence spectrometer/ellipsometer, a high angle of incidence spectrometer/ellipsometer, or a combination of the two.