The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2012
Filed:
Feb. 04, 2009
Keiji Mabuchi, Kanagawa, JP;
Nobuhiro Karasawa, Kanagawa, JP;
Keiji Mabuchi, Kanagawa, JP;
Nobuhiro Karasawa, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
In a case when a structure of forming a p+ layer on a substrate rear surface side is employed in order to prevent dark current generation from the silicon boundary surface, various problems occur. According to this invention, an insulation filmis provided on a rear surface on a silicon substrateand a transparent electrodeis further provided thereon, and by applying a negative voltage with respect to the potential of the silicon substratefrom a voltage supply sourceto the insulation filmthrough the transparent electrode, positive holes are accumulated on a silicon boundary surface of the substrate rear surface side and a structure equivalent to a state in which a positive hole accumulation layer exists on aforesaid silicon boundary surface is to be created. Thus, various problems in the related art can be avoided.