The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2012

Filed:

Mar. 12, 2010
Applicants:

Jongmyeong Lee, Seongnam-si, KR;

Zungsun Choi, Seoul, KR;

Gilheyun Choi, Seoul, KR;

Byung-lyul Park, Seoul, KR;

Jinho Park, Yongin-si, KR;

Hye Kyung Jung, Seoul, KR;

Inventors:

Jongmyeong Lee, Seongnam-si, KR;

Zungsun Choi, Seoul, KR;

Gilheyun Choi, Seoul, KR;

Byung-Lyul Park, Seoul, KR;

Jinho Park, Yongin-si, KR;

Hye Kyung Jung, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided are a metal interconnect of a semiconductor device and a method of fabricating the metal interconnect. The metal interconnect includes a metal line having a first end and a second end disposed on an opposite side to the first end, a via electrically connected to the metal line, and a non-active segment extending from the first end and including a void. Tensile stress is decreased to prevent a void from occurring under the via. Accordingly, line breakage due to electromigration is substantially prevented, thus improving electrical characteristics of the device.


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