The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2012
Filed:
Nov. 20, 2009
Brian C. Auman, Pickerington, OH (US);
Salah Boussaad, Wilmington, DE (US);
Thomas Edward Carney, Orient, OH (US);
Kostantinos Kourtakis, Media, PA (US);
Brian C. Auman, Pickerington, OH (US);
Salah Boussaad, Wilmington, DE (US);
Thomas Edward Carney, Orient, OH (US);
Kostantinos Kourtakis, Media, PA (US);
Other;
Abstract
A process for forming at least one transistor on a substrate is described. The substrate comprises a polyimide and a nanoscopic filler. The polyimide is derived substantially or wholly from rigid rod monomers and the nanoscopic filler has an aspect ratio of at least 3:1. The substrates of the present disclosure are particularly well suited for thin film transistor applications, due at least in part to high resistance to hygroscopic expansion and relatively high levels of thermal and dimensional stability.