The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2012
Filed:
Dec. 18, 2009
Mutsuo Morikado, Yokkaichi, JP;
Kiyomi Naruke, Sagamihara, JP;
Hiroaki Tsunoda, Yokohama, JP;
Tohru Maruyama, Kamakura, JP;
Fumitaka Arai, Yokkaichi, JP;
Mutsuo Morikado, Yokkaichi, JP;
Kiyomi Naruke, Sagamihara, JP;
Hiroaki Tsunoda, Yokohama, JP;
Tohru Maruyama, Kamakura, JP;
Fumitaka Arai, Yokkaichi, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A non-volatile memory of a semiconductor device has a tunnel insulation film provided on the active area; a floating gate electrode provided on the tunnel insulation film; a control gate electrode provided over the floating gate electrode; and an inter-electrode insulation film provided between the floating gate electrode and the control gate electrode, wherein, in a section of the non-volatile memory cell in a channel width direction, a dimension of a top face of the active area in the channel width direction is equal to or less than a dimension of a top face of the tunnel insulation film in the channel width direction, and the dimension of the top face of the tunnel insulation film in the channel width direction is less than a dimension of a bottom face of the floating gate electrode in the channel width direction.