The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2012
Filed:
Dec. 10, 2004
Hiroyuki Kinoshita, San Jose, CA (US);
Angela Hui, Fremont, CA (US);
Hsiao-han Thio, Santa Clara, CA (US);
Kuo-tung Chang, Saratoga, CA (US);
Minh Van Ngo, Fremont, CA (US);
Hiroyuki Ogawa, Sunnyvale, CA (US);
Hiroyuki Kinoshita, San Jose, CA (US);
Angela Hui, Fremont, CA (US);
Hsiao-Han Thio, Santa Clara, CA (US);
Kuo-Tung Chang, Saratoga, CA (US);
Minh Van Ngo, Fremont, CA (US);
Hiroyuki Ogawa, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Spansion L.L.C., Sunnyvale, CA (US);
Abstract
A memory device and a method of making the memory device are provided. A first dielectric layer is formed on a substrate, a floating gate is formed on the first dielectric layer, a second dielectric layer is formed on the floating gate, a control gate is formed on the second dielectric layer, and at least one film, including a conformal film, is formed over a surface of the memory device.