The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8319253 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 27, 2012

Filed:

Jan. 19, 2011
Applicants:

Wataru Tamura, Tokyo, JP;

Chiharu Sasaki, Tokyo, JP;

Inventors:

Wataru Tamura, Tokyo, JP;

Chiharu Sasaki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

The device including an active layer composed of AlGaInP, and an n-type clad layer and a p-type clad layer disposed so as to sandwich the active layer, the n-type clad layer and the p-type clad layer each having a bandgap greater than the bandgap of the active layer. The n-type clad layer includes a first n-type clad layer composed of AlGaInP and a second n-type clad layer composed of AlInP; and the second n-type clad layer has a thickness in the range from 40 nm to 200 nm.


Find Patent Forward Citations

Tamura, Wataru. (2012). Semiconductor light-emitting device (U.S. Patent No. 8319253). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8319253

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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