The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2012
Filed:
Nov. 14, 2008
Chantal Arena, Mesa, AZ (US);
Subhash Mahajan, Tempe, AZ (US);
Chantal Arena, Mesa, AZ (US);
Subhash Mahajan, Tempe, AZ (US);
Soitec, Bernin, FR;
Arizona Board of Regents for and on behalf of Arizona State University, Scottsdale, AZ (US);
Abstract
The invention provides methods which can be applied during the epitaxial growth of two or more layers of Group III-nitride semiconductor materials so that the qualities of successive layer are successively improved. In preferred embodiments, surface defects interact with a protective layer of a protective material to form amorphous complex regions capable of preventing the further propagation of defects and dislocations. The invention also includes semiconductor structures fabricated by these methods.