The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2012

Filed:

Jan. 07, 2011
Applicants:

Christian Russ, Diedorf, DE;

Christian Pacha, Munich, DE;

Snezana Jenei, Munich, DE;

Klaus Schruefer, Baldham, DE;

Inventors:

Christian Russ, Diedorf, DE;

Christian Pacha, Munich, DE;

Snezana Jenei, Munich, DE;

Klaus Schruefer, Baldham, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/36 (2006.01); H01L 21/329 (2006.01);
U.S. Cl.
CPC ...
Abstract

Some embodiments relate to an apparatus that exhibits vertical diode activity to occur between a semiconductive body and an epitaxial film that is disposed over a doping region of the semiconductive body. Some embodiments include an apparatus that causes both vertical and lateral diode activity. Some embodiments include a gated vertical diode for a finned semiconductor apparatus. Process embodiments include the formation of vertical-diode apparatus.


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