The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2012
Filed:
Apr. 01, 2008
Liubo Hong, San Jose, CA (US);
Honglin Zhu, Fremont, CA (US);
Liubo Hong, San Jose, CA (US);
Honglin Zhu, Fremont, CA (US);
Western Digital (Fremont), LLC, Fremont, CA (US);
Abstract
The method provides a magnetoresistive device. The magnetoresistive device is formed from a plurality of magnetoresistive layers. The method includes providing a mask. The mask covers a first portion of the magnetoresistive element layers in at least one device area. The magnetoresistive element(s) are defined using the mask. The method includes depositing hard bias layer(s). The method also includes providing a hard bias capping structure on the hard bias layer(s). The hard bias capping structure includes a first protective layer and a planarization stop layer. The first protective layer resides between the planarization stop layer and the hard bias layer(s). The method also includes performing a planarization. The planarization stop layer is configured for the planarization.