The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2012
Filed:
Jun. 22, 2011
Hee Bok Kang, Cheongju-si, KR;
Suk Kyoung Hong, Gwacheon-si, KR;
Hee Bok Kang, Cheongju-si, KR;
Suk Kyoung Hong, Gwacheon-si, KR;
SK Hynix Inc., Gyeonggi-do, KR;
Abstract
A phase change memory device having an improved performance that minimizes cell degradation is presented. The phase change memory device includes: a cell array, a sense amplifier, a write driving unit, and a reference level selecting unit. The cell array has a phase change resistor is configured to read/write data. The sense amplifier is configured to compare a reference voltage with a sensing voltage received from the cell array. The write driving unit is configured to supply a driving voltage corresponding to write data to the cell array. The reference level selecting unit is configured to select a read reference voltage in a read mode so as to output the reference voltage, and to select a reference voltage corresponding to input data in a write verifying mode so as to output the reference voltage.