The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2012
Filed:
Jan. 18, 2008
Yuukou Katou, Tokyo, JP;
Norikazu Ohshima, Tokyo, JP;
Yuukou Katou, Tokyo, JP;
Norikazu Ohshima, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
An MRAM according to the present invention has a magnetoresistance element. The magnetoresistance elementhas: a first magnetic layerincluding a first regionwhose magnetization direction is reversible; a second magnetic layerwhose magnetization direction is fixed parallel to a magnetization easy axis direction of the first region; and a non-magnetic layersandwiched between the first magnetic layerand the second magnetic layer. A domain wall DW is formed at least one end of the first regionof the first magnetic layer. The second magnetic layeris formed to overlap with the first region and the above-mentioned one end. At a time of data writing, a write current is applied between the first magnetic layerand the second magnetic layer