The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8314468 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 20, 2012

Filed:

Nov. 12, 2009
Applicants:

Derek Hullinger, Orem, UT (US);

Hideharu Matsuura, Osaka, JP;

Kazuo Taniguchi, Osaka-fu, JP;

Tadashi Utaka, Osaka, JP;

Inventors:

Derek Hullinger, Orem, UT (US);

Hideharu Matsuura, Osaka, JP;

Kazuo Taniguchi, Osaka-fu, JP;

Tadashi Utaka, Osaka, JP;

Assignee:

Moxtek, Inc., Orem, UT (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/115 (2006.01);
U.S. Cl.
CPC ...
Abstract

A silicon drift detector (SDD) comprising electrically isolated rings. The rings can be individually biased doped rings. One embodiment includes an SDD with a single doped ring. Some of the doped rings may not require a bias voltage. Some of the rings can be field plate rings. The field plate rings may all use the same biasing voltage as a single outer doped ring. The ring widths can vary such that the outermost ring is widest and the ring widths decrease with each subsequent ring towards the anode.


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