The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2012

Filed:

Sep. 04, 2008
Applicants:

Masaya Nakatani, Hyogo, JP;

Hiroshi Ushio, Osaka, JP;

Soichiro Hiraoka, Hyogo, JP;

Akiyoshi Oshima, Osaka, JP;

Makoto Takahashi, Osaka, JP;

Inventors:

Masaya Nakatani, Hyogo, JP;

Hiroshi Ushio, Osaka, JP;

Soichiro Hiraoka, Hyogo, JP;

Akiyoshi Oshima, Osaka, JP;

Makoto Takahashi, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 29/82 (2006.01); H01L 29/84 (2006.01); H01L 21/00 (2006.01); C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A silicon structure of the present invention is provided with a silicon substrate () to become a base, and a plurality of fibrous projections () made of silicon dioxide and directly joined to a silicon-made surface () of the silicon substrate (). By arbitrarily constructing an area where these fibrous projections () are formed in a predetermined area, it is possible to render the area to have at least either hydrophilicity or water retentivity, so as to provide a silicon structure useful for a variety of devices.


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