The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2012
Filed:
Feb. 04, 2010
Applicants:
Masayoshi Iwayama, Kawasaki, JP;
Yoshiaki Asao, Sagamihara, JP;
Takeshi Kajiyama, Yokohama, JP;
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
First semiconductor layers are in source/drain regions on the semiconductor substrate. A second semiconductor layer comprises first portions on the first semiconductor layers and a second portion in a linear form in a channel region between the source/drain regions. A gate electrode is around the second portion of the second semiconductor layer via an insulating film. A film thickness of the second portion of the second semiconductor layer is smaller than a film thickness of the first portion of the second semiconductor layer.