The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2012
Filed:
Apr. 27, 2011
Hyun-suk Kim, Gyeonggi-do, KR;
Sun-il Shim, Seoul, KR;
Chang-seok Kang, Gyeonggi-do, KR;
Won-cheol Jeong, Seoul, KR;
Jung-dal Choi, Seoul, KR;
Jae-kwan Park, Gyeonggi-do, KR;
Seung-hyun Lim, Yongin-si, KR;
Sun-jung Kim, Gyeonggi-do, KR;
Hyun-Suk Kim, Gyeonggi-do, KR;
Sun-Il Shim, Seoul, KR;
Chang-Seok Kang, Gyeonggi-do, KR;
Won-Cheol Jeong, Seoul, KR;
Jung-Dal Choi, Seoul, KR;
Jae-Kwan Park, Gyeonggi-do, KR;
Seung-Hyun Lim, Yongin-si, KR;
Sun-Jung Kim, Gyeonggi-do, KR;
Abstract
Non-volatile memory devices are provided including a control gate electrode on a substrate; a charge storage insulation layer between the control gate electrode and the substrate; a tunnel insulation layer between the charge storage insulation layer and the substrate; a blocking insulation layer between the charge storage insulation layer and the control gate electrode; and a material layer between the tunnel insulation layer and the blocking insulation layer, the material layer having an energy level constituting a bottom of a potential well.