The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2012
Filed:
May. 11, 2010
Mohammed Benwadih, Champigny sur Marne, FR;
Cécile Bory, Le Fontanil, FR;
Mohammed Benwadih, Champigny sur Marne, FR;
Cécile Bory, Le Fontanil, FR;
Abstract
An organic field-effect transistor includes: source and drain electrodes; a semiconductor layer made of an organic semiconductor material placed at least between said source and drain electrodes; a gate electrode suitable for creating an electric field that increases the density of mobile charge carriers in the semiconductor layer in order to create a conduction channel in this semiconductor layer between the source and drain electrodes when a voltage Vis applied to the gate electrode; and an electrical insulator layer interposed between the gate electrode and the semiconductor layer, characterized in that it further includes a piezoelectric layer placed close to the conduction channel, in the semiconductor layer between the source and drain electrodes or on the opposite side of the gate electrode with respect to the electrical insulator and semiconductor layers, alongside the source and drain electrodes, said piezoelectric layer being electrically isolated from said source and drain electrodes and from the semiconductor layer.