The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2012

Filed:

Dec. 15, 2003
Applicants:

Ji Yong Park, Suwon, KR;

Ki Yong Lee, Yongin, KR;

Hye Hyang Park, Suwon, KR;

Inventors:

Ji Yong Park, Suwon, KR;

Ki Yong Lee, Yongin, KR;

Hye Hyang Park, Suwon, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin film transistor including a lightly doped drain (LDD) region or offset region, wherein the thin film transistor is formed so that primary crystal grain boundaries of a polysilicon substrate are not positioned in the LDD or offset region.


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