The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2012

Filed:

Jan. 27, 2011
Applicants:

Rebecca J. Nikolic, Oakland, CA (US);

Adam M. Conway, Livermore, CA (US);

Robert T. Graff, Modesto, CA (US);

Catherine Reinhardt, Livermore, CA (US);

Lars F. Voss, Pleasanton, CA (US);

Qinghui Shao, Riverside, CA (US);

Inventors:

Rebecca J. Nikolic, Oakland, CA (US);

Adam M. Conway, Livermore, CA (US);

Robert T. Graff, Modesto, CA (US);

Catherine Reinhardt, Livermore, CA (US);

Lars F. Voss, Pleasanton, CA (US);

Qinghui Shao, Riverside, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01T 3/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods for fabricating three-dimensional PIN structures having conformal electrodes are provided, as well as the structures themselves. The structures include a first layer and an array of pillars with cavity regions between the pillars. A first end of each pillar is in contact with the first layer. A segment is formed on the second end of each pillar. The cavity regions are filled with a fill material, which may be a functional material such as a neutron sensitive material. The fill material covers each segment. A portion of the fill material is etched back to produce an exposed portion of the segment. A first electrode is deposited onto the fill material and each exposed segment, thereby forming a conductive layer that provides a common contact to each the exposed segment. A second electrode is deposited onto the first layer.


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