The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2012

Filed:

Aug. 31, 2009
Applicants:

Minglong Zhang, Shanghai, CN;

Yanfeng Du, Niskayuna, NY (US);

John Eric Tkaczyk, Niskayuna, NY (US);

Zhaoping Wu, Shanghai, CN;

Ira Blevis, Zicron Yaakov, IL;

Inventors:

Minglong Zhang, Shanghai, CN;

Yanfeng Du, Niskayuna, NY (US);

John Eric Tkaczyk, Niskayuna, NY (US);

Zhaoping Wu, Shanghai, CN;

Ira Blevis, Zicron Yaakov, IL;

Assignee:

General Electric Company, Niskayuna, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01T 1/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

A radiation detector includes a semiconductor crystal having a first surface and a second surface opposite to the first surface, a first electrode electrically coupled with the first surface of the semiconductor crystal to allow current to flow between the first electrode and the crystal, and an insulating layer on the first surface and between the semiconductor crystal and the first electrode so as to create a partially transmissive electrical barrier between the first electrode and the crystal. The insulating layer has a thickness ranging from about 50 nanometers to about 500 nanometers.


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