The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2012
Filed:
Jul. 17, 2010
Tetsufumi Kawamura, Kodaira, JP;
Hiroyuki Uchiyama, Musashimurayama, JP;
Hironori Wakana, Tokorozawa, JP;
Mutsuko Hatano, Kokubunji, JP;
Takeshi Sato, Mobara, JP;
Tetsufumi Kawamura, Kodaira, JP;
Hiroyuki Uchiyama, Musashimurayama, JP;
Hironori Wakana, Tokorozawa, JP;
Mutsuko Hatano, Kokubunji, JP;
Takeshi Sato, Mobara, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A method for manufacturing a thin film transistor (TFT) through a process including back exposure, in which oxide semiconductor is used for a channel layer; using an electrode over a substrate as a mask, negative resist is exposed to light from the back of the substrate; the negative resist except its exposed part is removed; and an electrode is shaped by etching a conductive film using the exposed part as an etching mask.