The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2012

Filed:

Jun. 04, 2010
Applicants:

Sung-il Cho, Seoul, KR;

Nam-gun Kim, Seoul, KR;

Jong-cheol Lee, Seoul, KR;

Inventors:

Sung-Il Cho, Seoul, KR;

Nam-Gun Kim, Seoul, KR;

Jong-Cheol Lee, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a semiconductor device includes forming a lower conductive pattern on a substrate, forming an insulating layer over the lower conductive pattern, forming a contact hole through the insulating layer to expose the lower conductive pattern, forming a first spacer along sides of the contact hole, and then forming a contact plug in the contact hole. The contact plug is formed so as to contact the lower conductive pattern.


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