The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2012
Filed:
Nov. 03, 2010
Applicants:
Jik-ho Cho, Gyeonggi-do, KR;
Seung-jin Yeom, Gyeonggi-do, KR;
Seung-hee Hong, Gyeonggi-do, KR;
Nam-yeal Lee, Gyeonggi-do, KR;
Inventors:
Jik-Ho Cho, Gyeonggi-do, KR;
Seung-Jin Yeom, Gyeonggi-do, KR;
Seung-Hee Hong, Gyeonggi-do, KR;
Nam-Yeal Lee, Gyeonggi-do, KR;
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a semiconductor device includes: forming a thin film over trenches by using a first source gas and a first reaction gas; performing a first post-treatment on the thin film by using a second reaction gas; and performing a second post-treatment on the thin film by using a second source gas.