The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2012
Filed:
Oct. 08, 2010
Akihisa Shimomura, Atsugi, JP;
Naoki Okuno, Sagamihara, JP;
Masaki Koyama, Atsugi, JP;
Yasuhiro Jinbo, Atsugi, JP;
Akihisa Shimomura, Atsugi, JP;
Naoki Okuno, Sagamihara, JP;
Masaki Koyama, Atsugi, JP;
Yasuhiro Jinbo, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
A first embrittlement layer is formed by doping a first single-crystal semiconductor substrate with a first ion; a second embrittlement layer is formed by doping a second single-crystal semiconductor substrate with a second ion; the first and second single-crystal semiconductor substrates are bonded to each other; the first single-crystal semiconductor film is formed over the second single-crystal semiconductor substrate by a first heat treatment; an insulating substrate is bonded over the first single-crystal semiconductor film; and the first and second single-crystal semiconductor films are formed over the insulating substrate by a second heat treatment. A dose of the first ion is higher than that of the second ion and a temperature of the first heat treatment is lower than that of the second heat treatment.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile