The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2012
Filed:
Jun. 19, 2009
Tsvetanka S. Zheleva, Rockville, MD (US);
Pankaj B. Shah, Rockville, MD (US);
Michael A. Derenge, Columbia, MD (US);
Daniel J. Ewing, Kensington, MD (US);
Tsvetanka S. Zheleva, Rockville, MD (US);
Pankaj B. Shah, Rockville, MD (US);
Michael A. Derenge, Columbia, MD (US);
Daniel J. Ewing, Kensington, MD (US);
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Abstract
A low-defect gallium nitride structure including a first gallium nitride layer comprising a plurality of gallium nitride columns etched into the first gallium nitride layer and a first dislocation density; and a second gallium nitride layer that extends over the gallium nitride columns and comprises a second dislocation density, wherein the second dislocation density may be lower than the first dislocation density. In addition, a method for fabricating a gallium nitride semiconductor layer that includes masking an underlying gallium nitride layer with a mask that comprises an array of columns and growing the underlying gallium nitride layer through the columns and onto said mask using metal-organic chemical vapor deposition pendeo-epitaxy to thereby form a pendeo-epitaxial gallium nitride layer coalesced on said mask to form a continuous pendeo-epitaxial monocrystalline gallium nitride semiconductor layer.