The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2012
Filed:
Jul. 14, 2010
Chang-ching Tu, Seattle, WA (US);
Liang Tang, Vancouver, WA (US);
Apostolos T. Voutsas, Portland, OR (US);
Chang-Ching Tu, Seattle, WA (US);
Liang Tang, Vancouver, WA (US);
Apostolos T. Voutsas, Portland, OR (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
A process of silicon (Si) surface modification is provided for the electrochemical synthesis of Si particles in suspension. The process begins with a Si first substrate with a surface, and forms Si particles attached to the surface. Hydrogen-terminated Si particles are created and the first substrate is immersed in a hexane/1-octene (1/1 volume ratio) solution with a catalytic amount of chloroplatinic acid (HPtCl). 1-octene is bonded with the hydrogen-terminated Si particles, creating modified Si particles, with octane capping ligands, attached to the substrate surface. The first substrate is then exposed to ultrasonication, separating the modified Si particles from the first substrate. After removing the first substrate, a suspension is created of modified Si particles suspended in excess hexane/1-octene.