The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2012
Filed:
Jul. 07, 2008
Rainer Leuschner, Regensburg, DE;
Ulrich Klostermann, Munich, DE;
Richard Ferrant, Esquibien, FR;
Qimonda AG, Munich, DE;
ALTIS Semiconductor, SNC, Corbeil Essonnes, FR;
Abstract
A thermally-assisted MRAM structure which is programmable at a writing mode operating temperature is presented and includes an anti-ferromagnet, an artificial anti-ferromagnet, a barrier layer, and a free magnetic layer. The anti-ferromagnet is composed of a material having a blocking temperature Twhich is lower than the writing mode operating temperature of the magnetic random access memory structure. The artificial anti-ferromagnet is magnetically coupled to the anti-ferromagnet, and includes first and second magnetic layers, and a coupling layer interposed therebetween, the first and second magnetic layers having different Curie point temperatures. The barrier layer is positioned to be between the second magnetic layer and the free magnetic layer.