The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8310863 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 13, 2012

Filed:

Feb. 04, 2011
Applicants:

Jonathan Zanhong Sun, Shrub Oak, NY (US);

Stuart Stephen Papworth Parkin, San Jose, CA (US);

Inventors:

Jonathan Zanhong Sun, Shrub Oak, NY (US);

Stuart Stephen Papworth Parkin, San Jose, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a magnetic memory element includes forming a plurality of magnetic layers having a perpendicular magnetic anisotropy component, in which the plurality of magnetic layers includes a first magnetic layer having an alloy of a rare-earth metal and a transition metal, and a second magnetic layer.


Find Patent Forward Citations

Sun, Jonathan. (2012). Spin-current switchable magnetic memory element and method of fabricating the memory element (U.S. Patent No. 8310863). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8310863

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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