The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2012

Filed:

Mar. 05, 2010
Applicants:

Wenjun Su, San Diego, CA (US);

Aristotele Hadjichristos, San Diego, CA (US);

Marco Cassia, San Diego, CA (US);

Chiewcharn Narathong, Laguna Nigel, CA (US);

Inventors:

Wenjun Su, San Diego, CA (US);

Aristotele Hadjichristos, San Diego, CA (US);

Marco Cassia, San Diego, CA (US);

Chiewcharn Narathong, Laguna Nigel, CA (US);

Assignee:

QUALCOMM, Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 5/153 (2006.01);
U.S. Cl.
CPC ...
Abstract

A high linear fast peak detector having a variable bias current and/or a variable bias voltage is described. In an exemplary design, the peak detector includes a transistor, a variable current source, a capacitor, and a feedback circuit. The transistor receives the input signal and provides a source current. The variable current source receives the input signal, provides high bias current when the input signal is low, and provides low bias current when the input signal is high. The capacitor is charged by the source current when the input signal is high and is discharged by the high bias current when the input signal is low. The feedback circuit receives a detected signal from the capacitor and provides higher bias voltage for the transistor when the input signal is high, which results in higher source current from the transistor.


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