The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2012
Filed:
Nov. 19, 2010
Naoki Torazawa, Toyama, JP;
Naoki Torazawa, Toyama, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes: a trench formed on an interlayer insulating film on a semiconductor substrate; a first barrier metal film formed to cover the bottom and sidewalls of the trench, the first barrier metal film being comprised of an electric conductor containing a platinum-group element, a refractory metal, and nitrogen; and a metal film formed on the first barrier metal film in the trench. The amount of nitrogen decreases in the thickness direction of the first barrier metal film toward the metal film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile