The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2012
Filed:
Jan. 09, 2009
Applicants:
Tatsuya Kiriyama, Kyoto, JP;
Noriaki Kawamoto, Kyoto, JP;
Inventors:
Tatsuya Kiriyama, Kyoto, JP;
Noriaki Kawamoto, Kyoto, JP;
Assignee:
Rohm Co., Ltd., Kyoto-fu, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/30 (2006.01); H01L 21/28 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a semiconductor substrate that is made of either of silicon carbide (SiC) and gallium nitride (GaN), and has a defect region containing a crystal defect; a first insulating film that coats the defect region and is arranged on the semiconductor substrate; and a conductor film that electrically connects to a principal surface of the semiconductor substrate, the principal surface being exposed to a region that is not coated with the first insulating film.