The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2012

Filed:

Jun. 12, 2008
Applicants:

Christian Russ, Diedorf, DE;

Christian Pacha, Munich, DE;

Snezana Jenei, Munich, DE;

Klaus Schruefer, Baldham, DE;

Inventors:

Christian Russ, Diedorf, DE;

Christian Pacha, Munich, DE;

Snezana Jenei, Munich, DE;

Klaus Schruefer, Baldham, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/73 (2006.01);
U.S. Cl.
CPC ...
Abstract

Embodiments relate to a bipolar transistor that includes a body region having a fin structure. At least one terminal region may be formed over at least a portion of the body region. The at least one terminal region may be formed as an epitaxially grown region. Embodiments also relate to a vertically integrated electronic device that includes a first terminal region, a second terminal region and a third terminal region. The second terminal region may be arranged over at least a portion of the third terminal region, and at least two of the first, second and third terminal regions may be formed as epitaxially grown regions.


Find Patent Forward Citations

Loading…