The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2012
Filed:
Jan. 30, 2012
Applicants:
Kyungtae Nam, Suwon-si, KR;
Sukhun Choi, Suwon-si, KR;
Jangeun Lee, Suwon-si, KR;
Sechung OH, Suwon-si, KR;
Junho Jeong, Suwon-si, KR;
Inventors:
Kyungtae Nam, Suwon-si, KR;
Sukhun Choi, Suwon-si, KR;
Jangeun Lee, Suwon-si, KR;
Sechung Oh, Suwon-si, KR;
Junho Jeong, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01);
U.S. Cl.
CPC ...
Abstract
A magnetic memory device includes a magnetic tunnel junction (MTJ) structure and an electrode embedded in a dielectric structure. The MTJ structure includes a free layer. The electrode is formed of silicon-germanium and is electrically connected to the MTJ. The electrode heats the free layer to reduce the coercive force of the free layer to reduce a critical current density.