The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2012
Filed:
Jul. 12, 2010
Ki-wook Kim, Yongin, KR;
Ki-Wook Kim, Yongin, KR;
Samsung Electronics Co., Ltd., Yongin, KR;
Abstract
A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT and an organic light emitting display device having the TFT. In one embodiment, a TFT includes a first gate electrode formed on a substrate. A source electrode is formed to be spaced apart from the gate electrode on the substrate. A first insulating layer is formed on the substrate. An active layer is formed of an oxide semiconductor on the first insulating layer, and connected to the source electrode. A second insulating layer is formed on the first insulating layer. A second gate electrode is formed on the second insulating layer so as not to overlap with the first gate electrode. A drain electrode is formed to be spaced apart from the second gate electrode on the second insulating layer, and connected to the active layer.