The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2012
Filed:
Feb. 21, 2008
Applicants:
Ryohei Matsubara, Tokyo, JP;
Mamoru Ishizaki, Tokyo, JP;
Inventors:
Ryohei Matsubara, Tokyo, JP;
Mamoru Ishizaki, Tokyo, JP;
Assignee:
Toppan Printing Co., Ltd., , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
One embodiment of the present invention is a thin film transistor, including: an insulating substrate; a gate electrode and a gate insulator being formed on the insulating substrate, in this order; a source electrode and a drain electrode formed on the gate insulator, surface preparation of the source electrode and the drain electrode being performed with a compound having a functional group with an electron-withdrawing property; and a semiconductor film formed on the gate insulator, the film being formed between the source electrode and the drain electrode.