The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2012

Filed:

Jul. 16, 2009
Applicants:

Timothy W. Weidman, Sunnyvale, CA (US);

Rohit Mishra, Santa Clara, CA (US);

Michael P. Stewart, San Francisco, CA (US);

Yonghwa Chris Cha, San Jose, CA (US);

Kapila P. Wijekoon, Palo Alto, CA (US);

Hongbin Fang, Mountain View, CA (US);

Inventors:

Timothy W. Weidman, Sunnyvale, CA (US);

Rohit Mishra, Santa Clara, CA (US);

Michael P. Stewart, San Francisco, CA (US);

Yonghwa Chris Cha, San Jose, CA (US);

Kapila P. Wijekoon, Palo Alto, CA (US);

Hongbin Fang, Mountain View, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/225 (2006.01); H01L 21/385 (2006.01);
U.S. Cl.
CPC ...
Abstract

Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include forming a doping layer on a back surface of a substrate, heating the doping layer and substrate to cause the doping layer diffuse into the back surface of the substrate, texturing a front surface of the substrate after heating the doping layer and the substrate, forming a dielectric layer on the back surface of the substrate, removing portions of the dielectric layer from the back surface to from a plurality of exposed regions of the substrate, and depositing a metal layer over the back surface of the substrate, wherein the metal layer is in electrical communication with at least one of the plurality of exposed regions on the substrate, and at least one of the exposed regions has dopant atoms provided from the doping layer.


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