The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2012

Filed:

Dec. 30, 2009
Applicants:

Eun-shil Park, Gyeonggi-do, KR;

Yong-seok Eun, Gyeonggi-do, KR;

Kee-jeung Lee, Gyeonggi-do, KR;

Min-soo Kim, Gyeonggi-do, KR;

Inventors:

Eun-Shil Park, Gyeonggi-do, KR;

Yong-Seok Eun, Gyeonggi-do, KR;

Kee-Jeung Lee, Gyeonggi-do, KR;

Min-Soo Kim, Gyeonggi-do, KR;

Assignee:

Hynix Semiconductor Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device with reduced resistance of a buried bit line, and a method for fabricating the same. The method for fabricating a semiconductor device includes etching a semiconductor substrate to form a plurality of active regions which are separated from one another by trenches formed in between, forming a side contact on a sidewall of each active region, and forming metal bit lines, each filling a portion of a respective trench and connected to the side contact.


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