The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2012

Filed:

Jul. 22, 2010
Applicants:

Toru Kawasaki, Kanagawa, JP;

Satoshi Kura, Kanagawa, JP;

Mitsuo Nissa, Kanagawa, JP;

Naotaka Kamishita, Kanagawa, JP;

Inventors:

Toru Kawasaki, Kanagawa, JP;

Satoshi Kura, Kanagawa, JP;

Mitsuo Nissa, Kanagawa, JP;

Naotaka Kamishita, Kanagawa, JP;

Assignee:

Renesas Electronics Corporation, Kawasaki-Shi, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/8239 (2006.01);
U.S. Cl.
CPC ...
Abstract

A first transistor includes a first gate insulating film, a first gate electrode, and a first sidewall. A second transistor includes a second gate insulating film, a second gate electrode, and a second sidewall. A capacitive element is connected to one side of source and drain regions of the second transistor. The first gate insulating film has the same thickness as that of the second gate insulating film, and the first gate electrode has the same thickness of that of the second gate electrode. The width of the second sidewall is larger than the width of the first sidewall.


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