The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8309377 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 13, 2012

Filed:

Mar. 01, 2005
Applicants:

Shu Yuan, Singapore, SG;

Xuejun Kang, Singapore, SG;

Inventors:

Shu Yuan, Singapore, SG;

Xuejun Kang, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Fabrication of Reflective Layer on Semiconductor Light emitting diodes A method for fabrication of a reflective layer on a semiconductor light emitting diode, the semiconductor light emitting diode having a wafer with multiple epitaxial layers on a substrate; the method comprising applying a first ohmic contact layer on a front surface of the multiple epitaxial layers, the first ohmic contact layer being of a reflective material to also act as a reflective layer.


Find Patent Forward Citations

Yuan, Shu. (2012). Fabrication of reflective layer on semiconductor light emitting devices (U.S. Patent No. 8309377). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8309377

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