The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2012

Filed:

Jul. 29, 2009
Applicant:

Jörg Vetter, Bergisch-Gladbach, DE;

Inventor:

Jörg Vetter, Bergisch-Gladbach, DE;

Assignee:

Sulzer Metaplas GmbH, Bergisch-Gladbach, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention provides a multilayer film-coated member having sufficient heat resistance and abrasion resistance and capable of exhibiting an effect of preventing adhesion even in cutting work of steel materials that may readily cause adhesion to cutting tools, and therefore capable of prolonging tools, and provides a method for producing it. The multilayer film-coated member is fabricated by coating the surface of a substrate with at least two hard coating films having different compositions, in which the first composition hard coating film of the outermost layer of the hard coating films represented by SiBNCOwith a+b+c+d+e=1, 0.1≦a≦0.5, 0.01≦b≦0.2, 0.05≦c≦0.6, 0.1≦d≦0.7 and 0<e≦0.2, the second composition hard coating film of the lower layer below the first composition hard coating film is a hard film having at least two selected from Al, Ti, Cr, Ni, Ce, Mg, Nb, W, Si, V, Zr, and Mo and N and at least one selected from B, C, O and S and in X-ray photoelectric spectrometry (XPS) of the first composition hard coating film, Si—O bond and B—O bond are detected, the ratio of the peak area α of Si—C to the peak area β of Si—O, α/β, as obtained from the peak separation of the 2p orbit of Si, satisfies 10.0≦α/β≦20.0, and the ratio of the peak area X of B—O to the peak area Y of B—N, X/Y, as obtained from the peak separation of the 1s orbit of B, satisfies 5.0≦X/Y≦10.0.


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