The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Oct. 23, 2010
Yoshiyuki Kawashima, Kanagawa, JP;
Takashi Hashimoto, Kanagawa, JP;
Yoshiyuki Kawashima, Kanagawa, JP;
Takashi Hashimoto, Kanagawa, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
There is provided a technology which can allow a semiconductor chip formed with a nonvolatile memory to be sufficiently reduced in size. There is also provided a technology which can ensure the reliability of the nonvolatile memory. In a memory cell of the present invention, a boost gate electrode is formed over a control gate electrode via an insulating film. The boost gate electrode has the function of boosting a voltage applied to a memory gate electrode through capacitive coupling between the boost gate electrode and the memory gate electrode. That is, during a write operation or an erase operation to the memory cell, a high voltage is applied to the memory gate electrode and, to apply the high voltage to the memory gate electrode, the capacitive coupling using the boost gate electrode is subsidiarily used in the present invention.