The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2012

Filed:

Jan. 27, 2012
Applicants:

Hideaki Fukuzawa, Kawasaki, JP;

Masahiro Takashita, Yokohama, JP;

Hiromi Yuasa, Kawasaki, JP;

Yoshihiko Fuji, Kawasaki, JP;

Hitoshi Iwasaki, Yokosuka, JP;

Inventors:

Hideaki Fukuzawa, Kawasaki, JP;

Masahiro Takashita, Yokohama, JP;

Hiromi Yuasa, Kawasaki, JP;

Yoshihiko Fuji, Kawasaki, JP;

Hitoshi Iwasaki, Yokosuka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/36 (2006.01);
U.S. Cl.
CPC ...
Abstract

An example magneto-resistance effect element includes a magnetization layer and a free magnetization layer of which magnetization direction changes depending on an external magnetic field. A spacer layer is located between the magnetization layer and the free magnetization layer, and has an insulating layer and an electric conductor passing current therethrough in a layer direction of the insulating layer. A diffusive electron scattering layer is disposed on said free magnetization layer for scattering diffusive electrons. The scattering layer includes a first nonmagnetic layer and a second nonmagnetic layer containing a first element and a second element, respectively, and a mixing layer disposed at a boundary between the first and second nonmagnetic layers and containing the first and second elements. The mixing layer has a thickness of 0.5 nm or more and 1.5 nm or less.


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