The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2012

Filed:

Feb. 17, 2006
Applicants:

Hye-young Ryu, Seoul, KR;

Jang-soo Kim, Suwon-si, KR;

Sang-gab Kim, Seoul, KR;

Hong-kee Chin, Suwon-si, KR;

Min-seok OH, Suwon-si, KR;

Hee-hwan Choe, Incheon-si, KR;

Shi-yul Kim, Yongin-si, KR;

Inventors:

Hye-Young Ryu, Seoul, KR;

Jang-Soo Kim, Suwon-si, KR;

Sang-Gab Kim, Seoul, KR;

Hong-Kee Chin, Suwon-si, KR;

Min-Seok Oh, Suwon-si, KR;

Hee-Hwan Choe, Incheon-si, KR;

Shi-Yul Kim, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1343 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin film transistor array panel is provided, which includes a gate line, a data line intersecting the gate line, a storage electrode apart from the gate and data lines, a thin film transistor connected to the gate and data lines and having a drain electrode, a pixel electrode connected to the drain electrode, a first insulating layer over the thin film transistor and disposed under the pixel electrode, and a second insulating layer disposed on the first insulating layer and having an opening exposing the first insulating layer on the storage electrode.


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