The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Aug. 24, 2009
Haruhiko Koyama, Yokohama, JP;
Haruhiko Koyama, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A lack of exposure margin is avoided in a region, where an interconnection is required in a direction different from that of an interconnection of a region where an exposure condition is optimized. A semiconductor device According to an aspect of the invention includes a semiconductor substrate; an interlayer insulating filmthat is formed on the semiconductor substrate; a plurality of first interconnections, . . . that are formed in a first region on the interlayer insulating filmwhile complying with a first design rule, the first interconnections running along a specific direction; a plurality of second interconnections, . . . that are formed in a second region on the interlayer insulating filmwhile complying with a second design rule identical to the first design rule, the second interconnections running along the same direction with that of the first interconnections, . . . ; and a connection memberthat is formed in the interlayer insulating film, the connection member forming a desired interconnection pattern by electrically connecting at least the two second interconnectionsandthat should become an identical potential.