The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8304858 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 06, 2012

Filed:

Mar. 24, 2011
Applicants:

Teruhisa Ikuta, Nara, JP;

Yoshinobu Sato, Osaka, JP;

Inventors:

Teruhisa Ikuta, Nara, JP;

Yoshinobu Sato, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/93 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a semiconductor device of the present invention, a first base regionis extended to a part under a gate electrodewhile having a vertical concentration profile of an impurity that increases from the surface of a semiconductor layerand becomes maximum under an emitter region, and the length in the lateral direction from a point where the impurity concentration becomes maximum located under an end of the gate electrodeto the boundary with a second base regionis not smaller than the length in the vertical direction from the point where the impurity concentration becomes maximum to the boundary with the second base region


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Ikuta, Teruhisa. (2012). Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof (U.S. Patent No. 8304858). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8304858

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