The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2012

Filed:

Sep. 16, 2010
Applicants:

Kazuhiro Suzuki, Tokyo, JP;

Ikuo Fujiwara, Yokohama, JP;

Keita Sasaki, Yokohama, JP;

Honam Kwon, Kawasaki, JP;

Hitoshi Yagi, Yokohama, JP;

Hiroto Honda, Yokohama, JP;

Koichi Ishii, Kawasaki, JP;

Masako Ogata, Tokyo, JP;

Risako Ueno, Tokyo, JP;

Hideyuki Funaki, Tokyo, JP;

Inventors:

Kazuhiro Suzuki, Tokyo, JP;

Ikuo Fujiwara, Yokohama, JP;

Keita Sasaki, Yokohama, JP;

Honam Kwon, Kawasaki, JP;

Hitoshi Yagi, Yokohama, JP;

Hiroto Honda, Yokohama, JP;

Koichi Ishii, Kawasaki, JP;

Masako Ogata, Tokyo, JP;

Risako Ueno, Tokyo, JP;

Hideyuki Funaki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.


Find Patent Forward Citations

Loading…